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GeneSiC Semiconductor

GeneSiCGeneSiC Semiconductor Inc. manufactures and markets silicon carbide (SiC) based power semiconductors and devices. The company offers SiC-based rectifier, transistor, and thyristor products. GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology and also develops high power Silicon technologies. GeneSiC Semiconductor plays a key enabling role in conserving energy in a wide array of high power systems. GeneSiC’s technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically.

GeneSiC holds leading patents on wide bandgap power device technologies. GeneSiC capitalizes on its expertise in device design, fabrication and testing to develop the best possible SiC devices for its customers. GeneSiC’s highly innovative and experienced engineers enable us to exceed the performance and price point of our competition. GeneSiC continually strives to promote their competitive Silicon products while developing new Silicon Carbide products. Specific applications for our products include: Protection, Input, Control Switching, and Output stages. It is GeneSiC’s goal to break down road blocks faced by their customers by offering highly efficient and ground breaking solutions that deliver superior thermal performance, minimal losses and compact performance.

Featured Products

  • GB01SLT Silicon Carbide Power Schottky Diodes

    GB01SLT Silicon Carbide Power Schottky Diodes

    Offers low leakage/reverse recovery currents and low standby power/switching losses.

  • GB10MPS17 SiC Power Schottky Diode

    GB10MPS17 SiC Power Schottky Diode

    A 1700V diode with low reverse current, low power/switching losses, and high avalanche capability.

  • GB02SLT12 Silicon Carbide Power Schottky Diodes

    GB02SLT12 Silicon Carbide Power Schottky Diodes

    SiC diodes with low leakage current, low switching loss, and superior surge current capability.

  • Silicon Carbide Junction Transistors/Schottky Diode Co-Packs

    Silicon Carbide Junction Transistors/Schottky Diode Co-Packs

    Hybrid silicon IGBT combined with a SiC rectifier that offers revolutionary switching performance.

  • High-Temperature SiC Transistors and Rectifiers

    High-Temperature SiC Transistors and Rectifiers

    Compact, high-temperature SiC Junction Transistors (SJTs) and rectifiers in a TO-46 package.

  • MBR20100 Silicon Power Schottky Diodes

    MBR20100 Silicon Power Schottky Diodes

    High durability & high surge capability in half the size/weight of standard power schottky diodes.