onsemi 2N6427

Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3

Datasheet

Product Details

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Compliance

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Lead Free

Radiation Hardening

No

RoHS

Compliant

Dimensions

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Height

6.35 mm

Length

6.35 mm

Width

6.35 mm

Physical

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Case/Package

TO-92

Mount

Through Hole

Number of Pins

3

Weight

201 mg

Supply Chain

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Lifecycle Status

Obsolete

Technical

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Collector Base Voltage (VCBO)

40 V

Collector Emitter Breakdown Voltage

40 V

Collector Emitter Saturation Voltage

1.2 V

Collector Emitter Voltage (VCEO)

40 V

Continuous Collector Current

500 mA

Current Rating

1.2 A

Element Configuration

Single

Emitter Base Voltage (VEBO)

12 V

hFE Min

10000

Max Breakdown Voltage

40 V

Max Collector Current

1.2 A

Max Operating Temperature

150 °C

Max Power Dissipation

625 mW

Min Operating Temperature

-55 °C

Number of Elements

1

Packaging

Bulk

Polarity

NPN

Power Dissipation

625 mW

Voltage Rating (DC)

40 V

Compliance Documents

Datasheet

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