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Texas Instruments CSD13201W10

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm 4-DSBGA -55 to 150

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
625 µm
Length
0 m
Thickness
650 µm
Width
0 m

Physical

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Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1.6 A
Drain to Source Breakdown Voltage
12 V
Drain to Source Resistance
26 mΩ
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Single
Fall Time
9.7 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
462 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.2 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
1.2 W
Rds On Max
34 mΩ
Rise Time
5.9 ns
Turn-Off Delay Time
14.4 ns
Turn-On Delay Time
3.9 ns

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