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Texas Instruments CSD17309Q3

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm 8-VSON-CLIP -55 to 150

Product Details

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Compliance

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Lead Free
Contains Lead
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
3.3 mm
Thickness
1 mm
Width
3.3 mm

Physical

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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
60 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
4.9 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
3.6 ns
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
1.44 nF
Max Operating Temperature
150 °C
Max Power Dissipation
2.8 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.2 V
Number of Elements
1
Packaging
Cut Tape (CT)
Power Dissipation
2.8 W
Rds On Max
5.4 mΩ
Rise Time
9.9 ns
Threshold Voltage
1.2 V
Turn-Off Delay Time
13.2 ns
Turn-On Delay Time
6.1 ns

Compliance Documents

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