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Texas Instruments CSD17527Q5A

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm 8-VSONP -55 to 150

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Dimensions

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Length
4.9 mm
Thickness
1 mm
Width
6 mm

Physical

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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
65 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
10.8 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
3.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
506 pF
Max Operating Temperature
150 °C
Max Power Dissipation
3 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
3 W
Rds On Max
10.8 mΩ
Rise Time
8.2 ns
Turn-Off Delay Time
9.8 ns
Turn-On Delay Time
5.6 ns

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