onsemi FDN360P

Transistor: P-MOSFET; unipolar; -30V; -2A; 0.08ohm; 0.5W; -55+150 deg.C; SMD; SOT23

Datasheet

Product Details

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Compliance

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Lead Free

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS

Compliant

Dimensions

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Height

940 µm

Length

2.92 mm

Width

1.4 mm

Physical

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Case/Package

SOT-23

Contact Plating

Tin

Mount

Surface Mount

Number of Pins

3

Weight

30 mg

Supply Chain

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Lifecycle Status

Production

Technical

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Continuous Drain Current (ID)

2 A

Current Rating

-2 A

Drain to Source Breakdown Voltage

-30 V

Drain to Source Resistance

63 mΩ

Drain to Source Voltage (Vdss)

-30 V

Dual Supply Voltage

-30 V

Element Configuration

Single

Fall Time

6 ns

Gate to Source Voltage (Vgs)

20 V

Input Capacitance

298 pF

Max Junction Temperature (Tj)

150 °C

Max Operating Temperature

150 °C

Max Power Dissipation

500 mW

Min Operating Temperature

-55 °C

Number of Channels

1

Number of Elements

1

Packaging

Cut Tape

Power Dissipation

500 mW

Rds On Max

80 mΩ

Resistance

80 MΩ

Rise Time

13 ns

Threshold Voltage

20 V

Turn-Off Delay Time

11 ns

Turn-On Delay Time

6 ns

Voltage Rating (DC)

-30 V

Compliance Documents

Datasheet

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Availability

1,000

Lead Time (weeks)

1

Unit Price

$1.2353

Total Price

$1,235.30

Minimum: 1,000

Multiples: 1,000

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