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Home > Discrete Semiconductors > Transistors > Mosfets > Fairchild HUF75339P3 N-Channel MOSFET 55V 75A TO-220AB

Fairchild HUF75339P3 N-Channel MOSFET 55V 75A TO-220AB

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Quick Overview

HUF75339P3 Fairchild Semiconductors MOSFET N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-220AB

Fairchild HUF75339P3 N-Channel MOSFET 55V 75A TO-220AB

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Details

Fairchild Semiconductor HUF75339P3 N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

The HUF75339P3 is a N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

Features:

75 A, 55 V
Simulation Models
Temperature Compensated PSPICE® and SABER™ Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
TB334, ¡°Guidelines for Soldering Surface Mount Components to PC Boards¡±

Part Specification:

  • Type : Power MOSFET
  • Number of Elements : Single
  • Polarity : N
  • Channel Mode : Enhancement
  • Drain-Source On-Volt : 55V
  • Gate-Source Voltage (Max) : ±20V
  • Drain Current (Max) : 75A
  • Drain-Source On-Res : 0.012Ohm
  • Package Type : TO-220AB
  • Packaging : Rail
  • Power Dissipation : 200W
  • Output Power (Max) : Not Required
  • Frequency (Max) : Not Required
  • Noise Figure : Not Required
  • Power Gain : Not Required
  • Drain Efficiency : Not Required
  • Pin Count : 3 +Tab
  • Mounting : Through Hole
  • Operating Temp Range : -55C to 175C
  • Operating Temperature Classification : Military

Additional Information

HUF75339P3
Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
Id - Continuous Drain Current: 75 A
Vds - Drain-Source Breakdown Voltage: 55 V
Rds On - Drain-Source Resistance: 12 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Configuration: Single
Click here to Download Datasheet I
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