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onsemi MMBF170

Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
930 µm
Length
2.92 mm
Width
3.05 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
500 mA
Current Rating
500 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
5 Ω
Drain to Source Voltage (Vdss)
60 V
Dual Supply Voltage
60 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
40 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Nominal Vgs
2.1 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
300 mW
Rds On Max
5 Ω
Resistance
5 Ω
Termination
SMD/SMT
Threshold Voltage
2.1 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
60 V

Compliance Documents

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