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onsemi FDN337N

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
940 µm
Length
2.92 mm
Width
3.05 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
2.2 A
Current Rating
2.2 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
300 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Nominal Vgs
700 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
65 mΩ
Resistance
65 mΩ
Rise Time
10 ns
Termination
SMD/SMT
Threshold Voltage
700 mV
Turn-Off Delay Time
17 ns
Turn-On Delay Time
4 ns
Voltage Rating (DC)
30 V

Compliance Documents

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