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onsemi FQA9P25

P-Channel Power MOSFET, QFET®, -250V, -10.5A, 620mΩ

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
20.1 mm
Length
15.8 mm
Width
5 mm

Physical

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Mount
Through Hole
Number of Pins
3
Weight
6.401 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
10.5 A
Current Rating
-10.5 A
Drain to Source Breakdown Voltage
-250 V
Drain to Source Resistance
620 mΩ
Drain to Source Voltage (Vdss)
250 V
Element Configuration
Single
Fall Time
65 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.18 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
150 W
Rds On Max
620 mΩ
Resistance
620 MΩ
Rise Time
150 ns
Turn-Off Delay Time
45 ns
Turn-On Delay Time
20 ns
Voltage Rating (DC)
-250 V

Compliance Documents

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