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onsemi FQB19N20LTM

N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
4.83 mm
Length
10.67 mm
Width
9.65 mm

Physical

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Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
21 A
Current
17 A
Current Rating
21 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
140 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
180 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.2 nF
Max Operating Temperature
150 °C
Max Power Dissipation
3.13 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Elements
1
Power Dissipation
3.13 W
Rds On Max
140 mΩ
Resistance
140 MΩ
Rise Time
300 ns
Threshold Voltage
2 V
Turn-Off Delay Time
130 ns
Turn-On Delay Time
35 ns
Voltage
200 V
Voltage Rating (DC)
200 V

Compliance Documents

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