onsemi FQU2N60CTU

Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK

Datasheet

Product Details

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Compliance

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Lead Free

RoHS

Compliant

Dimensions

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Height

6.1 mm

Length

6.6 mm

Width

2.3 mm

Physical

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Case/Package

TO-251-3

Contact Plating

Tin

Mount

Through Hole

Number of Pins

3

Weight

343.08 mg

Supply Chain

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Lifecycle Status

Production

Technical

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Continuous Drain Current (ID)

1.9 A

Current Rating

1.9 A

Drain to Source Breakdown Voltage

600 V

Drain to Source Resistance

4.7 Ω

Drain to Source Voltage (Vdss)

600 V

Element Configuration

Single

Fall Time

28 ns

Gate to Source Voltage (Vgs)

30 V

Input Capacitance

235 pF

Max Operating Temperature

150 °C

Max Power Dissipation

2.5 W

Min Operating Temperature

-55 °C

Number of Elements

1

Power Dissipation

2.5 W

Rds On Max

4.7 Ω

Resistance

4.7 Ω

Rise Time

25 ns

Turn-Off Delay Time

24 ns

Turn-On Delay Time

9 ns

Voltage Rating (DC)

600 V

Compliance Documents

Datasheet

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