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Home > Semiconductors > Optocouplers / Photocouplers > Discrete Semiconductors > Transistors > GI MCT2E Optocoupler DC-IN 1-CH Trans W/Base DC-OUT

GI MCT2E Optocoupler DC-IN 1-CH Trans W/Base DC-OUT

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Ge - Gi Mct2E Transistor Optocoupl DC-IN 1-CH Trans W/Base DC-OUT 6-Pin PDIP

GI MCT2E Optocoupler DC-IN 1-CH Trans W/Base DC-OUT

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GE - GI MCT2E Optocoupler DC-IN 1-CH Trans W/Base DC-OUT 6-Pin PDIP

Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio Base Lead Provided for Conventional Transistor Biasing High-Voltage Electrical Isolation. or 3.55-kV Rating Plastic Dual-In-Line Package High-Speed Switching: = 5 µs, 5 µs Typical Designed to be Interchangeable with General Instruments MCT2 and MCT2E

MCT2E, MCT2
 
 
Circuit and Package
       
Circuit
Package
 
Features
  2500 or 1500 V Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package.
 
Description
  The MCT2E, MCT2 are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.
 
Absolute Maximum Ratings (Ta=25°C)
 
Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±1500V (MCT2)
±2500V (MCT2E)

Input Diode
Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
Derate Linearly:
60mA
3V
3A (t p=10µs)
100mW
1.33mW/°C above 25°C

Output Transistor
Collector-Emitter Voltage:
Emitter-Collector Voltage:
Collector-Base Voltage:
Power Dissipation:
Derate Linearly:
30V
7V
70V
150mW
2.00mW/°C above 25°C

Package
Total Power Dissipation:
Derate Linearly:
250mW
3.3mW/°C above 25°C
 
Electro-optical Characteristics
 
INPUT PARAMETER CONDITIONS MIN TYP MAX UNIT
VF Forward Current IF=20mA   1.2 1.5 V
IR Reverse Current VR=3V     10 µA
VR Reverse Breakdown Voltage IR=10µA 3     V
OUTPUT
BVCEO Collector-Emitter Voltage IC=1mA 30     V
BVECO Emitter-Collector Voltage IE=100µA 7     V
BVCBO Collector-Base Voltage IC=100µA 70     V
ICEO Collector-Emitter Dark Current VCE=10V, IB=0     50 nA
ICBO Collector-Base Dark Current VCB=10V, IE=0     20 nA
CCE Collector-Emitter Capacitance VCE=0   10   pF
HFE   VCE=5.0V, IC=100µA 100 150    
COUPLED PARAMETER CONDITIONS MIN TYP MAX UNIT
IC/IF DC Current Transfer Ratio IF=10mA, VCE=10V, IB=0 20     %
RIO Input-to-Output Isolation Resistance VIO=500V, (note 1) 1E11     ohm
VCE(SAT) Collector-Emitter Saturation Voltage IF=10mA, IC=2.5mA     0.4 V
CIO Capacitance Input to Output f=1MHz, (note 1)   0.6   pF
TR Output Rise Time VCC=10V, IC=2mA   2   µs
TF Output Fall Time RL=100   2   µs

 
Input-Output Isolation Voltage (Note 1)        
MCT2E 2500     V
MCT2 1500     V
Notes

1. Measured with input leads shorted together and output leads shorted together.

Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website.

Additional Information

MCT2
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