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Home > Semiconductors > Discrete Semiconductors > Transistors > ITT Semiconductor IMBT3904 NPN Transistor, GP 50mA 40V SOT-23

ITT Semiconductor IMBT3904 NPN Transistor, GP 50mA 40V SOT-23

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Itt - Itt Semiconductor Imbt3904 NPN General Purpose Amplifier, BJT Bipolar Transistor 50mA 40V SOT-23

ITT Semiconductor IMBT3904 NPN Transistor, GP 50mA 40V SOT-23

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ITT Semiconductor IMBT3904 NPN General Purpose Transistor / 50mA 40V SOT-23

Technical data
Polarity NPN
Collector-Emitter Voltage (Vce) 40V
Collector Current (Ic) 50mA
Power Dissipation (Pd) 310mW
Amplification (hFE) 100 - 300
Transition Frequency (fT) 300MHz
Casing SOT-23
Temperature -55/+150°C
Mounting SMD Type Designator: IMBT3904

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of IMBT3904 transistor: TO236

Additional Information

IMBT3904
Manufacturer: ITT Semiconductor (Acquired by Vishay)
Click here to Download Datasheet I
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