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Home > Semiconductors > ICs > Memory > IS61LV256-12JI Memory - High-Speed CMOS SRAM, Asynchronous 256K

IS61LV256-12JI Memory - High-Speed CMOS SRAM, Asynchronous 256K

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Quick Overview

ISSI IS61LV256-12JI SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 12ns 28-Pin SOJ

IS61LV256-12JI Memory - High-Speed CMOS SRAM, Asynchronous 256K

Details

High-speed access times: ns Automatic power-down when chip is deselected CMOS low power operation 345 mW (max.) operating 7 mW (max.) CMOS standby TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three-state outputs Lead-free Available

ISSI Is61Lv256-12Ji IC SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 12ns 28-Pin SOJ
Memory - High-Speed CMOS SRAM, Asynchronous 256K 32Kx8 12ns 3.3v



Specifications
Memory Category SRAM Chip
Density 262 kbits
Number of Words 32 k
Bits per Word 8 bits
Package Type TSOP, 0.450 INCH, LEAD FREE, PLASTIC, TSOP1-28
Pins 28
Logic Family CMOS
Supply Voltage 3.3V
Access Time 10 ns
Operating Temperature 0 to 70 C (32 to 158 F)

Additional Information

IS61LV256-12JI
Click here to Download Datasheet I
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