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Home > Discrete Semiconductors > Diodes & Rectifiers > Transistors > MICROSEMI JAN2N2907A Transistor GP BJT PNP 60V 0.6A 3-Pin TO-18

MICROSEMI JAN2N2907A Transistor GP BJT PNP 60V 0.6A 3-Pin TO-18

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Mot - Motorola Jan2N2907A Trans GP BJT PNP 60V 0.6A 3-Pin TO-18

MICROSEMI JAN2N2907A Transistor GP BJT PNP 60V 0.6A 3-Pin TO-18

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MICROSEMI JAN2N2907A Transistor GP BJT PNP 60V 0.6A 3-Pin TO-18


Product Category: Bipolar Transistors - BJT
RoHS: No
Transistor Polarity: PNP
Collector- Emitter Voltage VCEO Max: - 60 V
Emitter- Base Voltage VEBO: - 5 VDC
Maximum DC Collector Current: - 600 mA
Mounting Style: Through Hole
Package / Case: TO-18
Brand: ON Semiconductor
Packaging: Tube
Pd - Power Dissipation: 625 mW

Additional Information

JAN2N2907A
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