onsemi NTGS4111PT1G

NTGS4111PT1G P-channel MOSFET Transistor; 4.7 A; 30 V; 6-Pin TSOP

Datasheet

Product Details

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Compliance

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Lead Free

Radiation Hardening

No

RoHS

Compliant

Dimensions

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Height

1 mm

Length

3.1 mm

Width

1.7 mm

Physical

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Case/Package

TSOP

Number of Pins

6

Supply Chain

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Lifecycle Status

Production

Technical

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Continuous Drain Current (ID)

3.7 A

Current Rating

-4.7 A

Drain to Source Breakdown Voltage

-30 V

Drain to Source Resistance

68 mΩ

Drain to Source Voltage (Vdss)

30 V

Element Configuration

Single

Fall Time

9 ns

Gate to Source Voltage (Vgs)

20 V

Input Capacitance

750 pF

Max Operating Temperature

150 °C

Max Power Dissipation

630 mW

Min Operating Temperature

-55 °C

Number of Elements

1

Packaging

Tape and Reel

Power Dissipation

1.25 W

Rds On Max

60 mΩ

Resistance

38 MΩ

Rise Time

9 ns

Turn-Off Delay Time

38 ns

Turn-On Delay Time

9 ns

Voltage Rating (DC)

-30 V

Compliance Documents

Datasheet

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