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NXP Semiconductors BAS516115

Rectifier Diode, 1 Phase, 1 Element, 0.25A, 85V V(RRM), Silicon

Product Details

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
650 µm
Length
1.25 mm
Width
850 µm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
2
Weight
4.535924 g

Technical

Average Rectified Current
250 mA
Current
2 A
Element Configuration
Single
Forward Current
250 mA
Forward Voltage
1.25 V
Max Forward Surge Current (Ifsm)
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
500 W
Max Repetitive Reverse Voltage (Vrrm)
100 V
Max Reverse Leakage Current
1 µA
Max Reverse Voltage (DC)
100 V
Max Surge Current
4 A
Min Operating Temperature
-65 °C
Peak Non-Repetitive Surge Current
4 A
Peak Reverse Current
500 nA
Power Dissipation
500 mW
Recovery Time
4 ns
Reverse Recovery Time
4 ns
Voltage
100 V

Compliance Documents

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