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Home > Mosfets > SI4090DY-T1-GE3 Vishay MOSFET N-Channel 100V 13.2A 8-SOIC

SI4090DY-T1-GE3 Vishay MOSFET N-Channel 100V 13.2A 8-SOIC

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Vishay SI4090DY-T1-GE3 MOSFET Transistor, N Channel, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V , RoHS

SI4090DY-T1-GE3 Vishay MOSFET N-Channel 100V 13.2A 8-SOIC

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SI4090DY-T1-GE3 Vishay Siliconix N-Channel 100 V 10 mOhm 7.8 W SMT Power Mosfet - SOIC-8
Product Category: MOSFET
Manufacturer: Vishay
RoHS: RoHS Compliant
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 19.7 A
Rds On - Drain-Source Resistance: 0.008 Ohms
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 69 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: 1 N-Channel
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Brand: Vishay Semiconductors
Fall Time: 10 ns
Forward Transconductance - Min: 54 S
Pd - Power Dissipation: 7.8 W
Rise Time: 11 ns
Series: SI4
Factory Pack Quantity: 2500
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 16 ns
Part # Aliases: SI4090DY-GE3
Unit Weight: 0.017870 oz

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