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Vishay SI4435DDY-T1-GE3

Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

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Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
186.993455 mg

Technical

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Continuous Drain Current (ID)
-8.1 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
19.5 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.35 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
24 mΩ
Resistance
24 MΩ
Rise Time
35 ns
Threshold Voltage
-3 V
Turn-Off Delay Time
40 ns
Turn-On Delay Time
10 ns

Compliance Documents

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