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Vishay SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.5 A; 12 V; 6-Pin SC-70

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
800 µm

Physical

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Mount
Surface Mount
Number of Pins
6
Weight
28.009329 mg

Technical

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Continuous Drain Current (ID)
4.5 A
Drain to Source Breakdown Voltage
12 V
Drain to Source Resistance
48 mΩ
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
420 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
7.8 W
Min Operating Temperature
-55 °C
Nominal Vgs
400 mV
Number of Channels
2
Number of Elements
2
Packaging
Digi-Reel®
Power Dissipation
1.9 W
Rds On Max
34 mΩ
Resistance
34 MΩ
Threshold Voltage
400 mV

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