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Infineon SPB20N60C3ATMA1

Single N-Channel 650 V 190 mOhm 87 nC CoolMOS™ Power Mosfet - D2PAK

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
TO-263-3
Number of Pins
3

Supply Chain

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Lifecycle Status
NRND

Technical

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Continuous Drain Current (ID)
20.7 A
Current
20 A
Current Rating
20.7 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
190 mΩ
Drain to Source Voltage (Vdss)
650 V
Dual Supply Voltage
650 V
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.4 nF
Max Operating Temperature
150 °C
Max Power Dissipation
208 W
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
On-State Resistance
190 mΩ
Package Quantity
1000
Packaging
Tape & Reel
Power Dissipation
208 W
Rds On Max
190 mΩ
Rise Time
5 ns
Termination
SMD/SMT
Threshold Voltage
3 V
Turn-Off Delay Time
67 ns
Turn-On Delay Time
10 ns
Voltage
600 V
Voltage Rating (DC)
650 V

Compliance Documents

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