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Home > Discrete Semiconductors > Transistors > Mosfets > STMicroelectronics STW9NB90 N-Channel MOSFET Transistor 900V 9.7A 190W TO-247

STMicroelectronics STW9NB90 N-Channel MOSFET Transistor 900V 9.7A 190W TO-247

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STW9NB90. N-CHANNEL 900V PowerMESH MOSFET, Static Drain-source On Resistance. Capacitance Variations Trans MOSFET N-CH 900V 9.7A 3-Pin TO-247

STMicroelectronics STW9NB90 N-Channel MOSFET Transistor 900V 9.7A 190W TO-247

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STMicroelectronics STW9NB90 N-Channel MOSFET Transistor 900V 9.7A 190W TO-247 Through Hole

DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Additional Information

STW9NB90
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: RoHS Compliant
Id - Continuous Drain Current: 9.7 A
Vds - Drain-Source Breakdown Voltage: 900 V
Rds On - Drain-Source Resistance: 1 Ohms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 30 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 190 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Configuration: Single
Fall Time: 26 ns
Click here to Download Datasheet I
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