Skip to main content

Texas Instruments CSD18531Q5A

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm 8-VSONP -55 to 150

Product Details

Find similar products  

Compliance

Select to search
related specs
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.1 mm
Length
4.9 mm
Thickness
1 mm
Width
6 mm

Physical

Select to search
related specs
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
3.5 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
2.7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.84 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.1 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.8 V
Number of Channels
1
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
3.1 W
Rds On Max
4.6 mΩ
Rise Time
7.8 ns
Threshold Voltage
1.8 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
4.4 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us