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Home > Optoelectronics > Infrared Data Communications > Infrared Emitters > TSHA4400 Vishay Semiconductors Infrared Emitters 5V 20mW 875nm T-1

TSHA4400 Vishay Semiconductors Infrared Emitters 5V 20mW 875nm T-1

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Vishay - Infrared emitters - TSHA4400, TSHA4401 - Infrared Emitting Infrared (IR) Emitter 875nm 1.5V 100mA 12mW/sr @ 100mA 40° Radial, 3mm Dia (T-1)

TSHA4400 Vishay Semiconductors Infrared Emitters 5V 20mW 875nm T-1

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TSHA4400 Vishay Semiconductors InfraRed LED Emitter 5V 20mW 875nm T-1 ±20° Through Hole Infrared Emitting Diode

The TSHA4400 is a infrared emitting diode. It consist of 875 nm wavelength in GaAlAs technology, molded in a clear, untinted plastic package.

Features:

Package type: leaded
Package form: T-1
Dimensions (in mm): Ø 3
Peak wavelength: ?p = 875 nm
High reliability
Angle of half intensity: ? = ± 20°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications:

Infrared remote control and free air data transmission systems with comfortable radiation angle
This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass

Part Specification:

  • Number of Elements : Single
  • Main Category : IrLED
  • Chip Material : AlGaAs
  • Packaging : Bulk
  • Shape Type : Circular
  • Lens Type : Colorless N Diffused
  • Forward Current : 100mA
  • Forward Voltage : 4.9V
  • Package Type : T-1
  • Operating Temperature Classification : Industrial
  • Peak Wavelength : 875nm
  • Reverse Breakdown Voltage : 5V
  • Lum Intensity : 240mcd
  • Viewing Angle (Typ) : 40°
  • Power Dissipation : 180mW
  • Operating Temp Range : -40C to 85C
  • Mounting : Through Hole
  • Pin Count : 2
  • Lens Dimensions : 2.9x2.9x3.5mm
  • High Brightness : No
  • Type : IrLED

Features, Applications
FEATURES

Package type: leaded Package form: T-1 Dimensions (in mm): Ø 3 Peak wavelength: 875 nm High reliability Angle of half intensity: ± 20° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.

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Additional Information

TSHA4400
Click here to Download Datasheet I
Click here to Download Datasheet II
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