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Texas Instruments CSD88537ND

60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm 8-SOIC -55 to 150

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.75 mm
Length
4.9 mm
Thickness
1.58 mm
Width
3.91 mm

Physical

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Case/Package
SOIC
Contact Plating
Gold
Mount
Surface Mount
Number of Pins
8
Weight
540.001716 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
15 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
12.5 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Dual
Fall Time
19 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.4 nF
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape & Reel (TR)
Power Dissipation
2.1 W
Rds On Max
15 mΩ
Rise Time
15 ns
Threshold Voltage
3 V
Turn-Off Delay Time
9 ns
Turn-On Delay Time
6 ns

Compliance Documents

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