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onsemi NDT452AP

P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.8 mm
Width
6.7 mm

Physical

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Case/Package
SOT-223
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
5 A
Current
5 A
Current Rating
-5 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
30 V
Fall Time
19 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
690 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.1 W
Min Operating Temperature
-65 °C
Nominal Vgs
1.6 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
3 W
Rds On Max
65 mΩ
Resistance
65 mΩ
Rise Time
20 ns
Threshold Voltage
-1.6 V
Turn-Off Delay Time
40 ns
Turn-On Delay Time
9 ns
Voltage Rating (DC)
-30 V

Compliance Documents

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