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Infineon IRF9333TRPBF

Mosfet Transistor, P Channel, -9.2 A, -30 V, 15.6 Mohm, -10 V, -1.8 V

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.4986 mm
Length
4.9784 mm
Width
3.9878 mm

Physical

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Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
-9.2 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
15.6 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
49 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.11 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Nominal Vgs
-1.8 V
Number of Channels
1
Number of Elements
1
On-State Resistance
19.4 mΩ
Package Quantity
3800
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
19.4 mΩ
Recovery Time
36 ns
Resistance
19.4 MΩ
Rise Time
44 ns
Threshold Voltage
-1.8 V
Turn-Off Delay Time
55 ns
Turn-On Delay Time
16 ns

Compliance Documents

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