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onsemi MJD3055T4G

Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 1.75 W Surface Mount DPAK

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.38 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Number of Pins
3
Weight
4.535924 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
70 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
1.1 V
Collector Emitter Voltage (VCEO)
60 V
Current Rating
10 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
2 MHz
Gain Bandwidth Product
2 MHz
hFE Min
20
Max Breakdown Voltage
60 V
Max Collector Current
10 A
Max Frequency
500 kHz
Max Operating Temperature
150 °C
Max Power Dissipation
1.75 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.75 W
Transition Frequency
2 MHz
Voltage Rating (DC)
60 V

Compliance Documents

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