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onsemi NTJS3151PT1G

Single P-Channel Trench Power MOSFET with ESD Protection -12V -3.3A 60mΩ

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-363-6
Contact Plating
Tin
Number of Pins
6

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
2.7 A
Current Rating
-3.3 A
Drain to Source Breakdown Voltage
-12 V
Drain to Source Resistance
133 mΩ
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Single
Fall Time
1.5 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
850 pF
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
625 mW
Rds On Max
60 mΩ
Resistance
45 mΩ
Rise Time
1.5 ns
Turn-Off Delay Time
3.5 ns
Turn-On Delay Time
860 ps
Voltage Rating (DC)
-12 V

Compliance Documents

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