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onsemi MJD122G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.38 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
2 V
Collector Emitter Voltage (VCEO)
100 V
Continuous Collector Current
8 A
Current Rating
8 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
1000
Max Collector Current
8 A
Max Operating Temperature
150 °C
Max Power Dissipation
1.75 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
20 W
Transition Frequency
4 MHz
Voltage Rating (DC)
100 V

Compliance Documents

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