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Nexperia PSMN1R0-40YLDX

Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SOT
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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related specs
Continuous Drain Current (ID)
100 A
Drain to Source Resistance
1.1 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Fall Time
38 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
8.845 nF
Max Dual Supply Voltage
40 V
Max Operating Temperature
150 °C
Max Power Dissipation
198 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel
Rds On Max
1.1 mΩ
Rise Time
62 ns
Turn-Off Delay Time
65 ns
Turn-On Delay Time
52 ns

Compliance Documents

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