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Home > Discrete Semiconductors > Transistors > Mosfets > SAMSUNG SSP4N60A N-Channel MOSFET Transistor 4A 600V TO-220

SAMSUNG SSP4N60A N-Channel MOSFET Transistor 4A 600V TO-220

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Quick Overview

SSP4N60A Samsung Semiconductor Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SAMSUNG SSP4N60A N-Channel MOSFET Transistor 4A 600V TO-220

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Samsung SSP4N60A Power Field-Effect Transistor 4A, 600V, 2.5ohm, N-CHANNEL, Si, MOSFET, TO-220

Type Designator: SSP4N60

Type of SSP4N60 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSP4N60 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Additional Information

Click here to Download Datasheet I
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