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Vishay SI2308BDS-T1-E3

Transistor: N-MOSFET; unipolar; 60V; 2.3A; 0.156ohm; 1.66W; -55+150 deg.C; SMD; SOT23

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.02 mm
Length
3.04 mm
Width
1.4 mm

Physical

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Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3
Weight
1.437803 g

Technical

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Continuous Drain Current (ID)
1.9 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
130 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
190 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.14 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
1.09 W
Rds On Max
54 mΩ
Resistance
156 MΩ
Rise Time
16 ns
Threshold Voltage
1 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
4 ns

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