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STMicroelectronics STD3NK60Z-1

Transistor MOSFET N-CH 600V 2.4A 3-Pin (3+Tab) IPAK Tube

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
6.2 mm
Length
6.6 mm
Width
2.4 mm

Physical

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Case/Package
TO-251-3
Mount
Through Hole
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
2.4 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
3.6 Ω
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
14 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
311 pF
Max Operating Temperature
150 °C
Max Power Dissipation
45 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
45 W
Rds On Max
3.6 Ω
Rise Time
14 ns
Threshold Voltage
3.75 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
9 ns

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