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Home > Discrete Semiconductors > Transistors > STMicroelectronics BCV27 NPN Darlington Transistor 30V 1.2A SMD SOT-23

STMicroelectronics BCV27 NPN Darlington Transistor 30V 1.2A SMD SOT-23

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BCV27 STMicroelectronics NPN Darlington Transistor Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 220MHz 350mW Surface Mount SOT-23-3

STMicroelectronics BCV27 NPN Darlington Transistor 30V 1.2A SMD SOT-23

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STMicroelectronics BCV27 NPN Darlington Transistor 30V 1.2A SMT / SMD SOT-23

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Part Specification:

  • Polarity : NPN
  • Number of Elements : Single
  • Collector-Emitter Voltage : 30V
  • Collector-Base Voltage (Max) : 40V
  • Emitter-Base Voltage (Max) : 10V
  • Collector Current (DC) (Max) : 1.2A
  • Operating Temp Range : -55C to 150C
  • Base-Emitter Saturation Voltage (Max) : [email protected]@100mAV
  • Package Type : SOT-23
  • Packaging : Tape and Reel
  • Pin Count : 3
  • Mounting : Surface Mount
  • Collector-Emitter Saturation Voltage : [email protected]@100mAV
  • Operating Temperature Classification : Military

Additional Information

Manufacturer: STMicroelectronics
Product Category: Darlington Transistors
Configuration: Single
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 30 V
Emitter- Base Voltage VEBO: 10 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 1.2 A
Maximum Collector Cut-off Current: 0.1 uA
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23
Brand: STMicroelectronics
DC Collector/Base Gain hfe Min: 4000
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