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Toshiba TK5A50D(STA4,Q,M)

Trans MOSFET N-CH Si 500V 5A 3-Pin(3+Tab) TO-220SIS

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3

Technical

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Continuous Drain Current (ID)
5 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
1.5 Ω
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
490 pF
Max Operating Temperature
150 °C
Max Power Dissipation
35 W
Min Operating Temperature
-55 °C
Power Dissipation
35 W
Rds On Max
1.5 Ω
Rise Time
18 ns

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