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Home > Discrete Semiconductors > Transistors > Mosfets > Vishay / Siliconix SI7850DP-T1-E3 N-Channel MOSFET 60V 6.2A 1.8W SMD PowerPAK-8

Vishay / Siliconix SI7850DP-T1-E3 N-Channel MOSFET 60V 6.2A 1.8W SMD PowerPAK-8

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Vishay / Siliconix SI7850DP-T1-E3 N-Channel MOSFET Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

Vishay / Siliconix SI7850DP-T1-E3 N-Channel MOSFET 60V 6.2A 1.8W SMD PowerPAK-8

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Vishay / Siliconix SI7850DP-T1-E3 N-Channel MOSFET 60V 6.2A 1.8W SMT / SMD PowerPAK-8
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors. The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.
The Si7850DP features a new low thermal resistance PowerPAK® and TrenchFET® Power MOSFET Technology. This 60V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 22 milliohms at a 60-V gate drive voltage. Specifically designed as a primary side switch for 24-V DC/DC applications and a secondary synchronous rectifier.

Additional Information

SI7850DP-T1-E3
Manufacturer: Vishay
Product Category: MOSFET
Brand: Vishay Semiconductors
Id - Continuous Drain Current: 6.2 A
Vds - Drain-Source Breakdown Voltage: 60 V
Rds On - Drain-Source Resistance: 22 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: powerPAK-8
Channel Mode: Enhancement
Configuration: Single
Pd - Power Dissipation: 1.8 W
Tradename: TrenchFET
Click here to Download Datasheet I
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