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Infineon SPD30P06PGBTMA1

Transistor, MOSFET, P-channel, -60V, 0.075 Ohm, -30A, TO252-3, SIPMOS Power Infineon SPD30P06P G

Product Details

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Compliance

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Halogen Free
Not Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Dimensions

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Height
2.5 mm

Physical

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Case/Package
TO-252
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-30 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
69 mΩ
Drain to Source Voltage (Vdss)
-60 V
Fall Time
20 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.228 nF
Max Dual Supply Voltage
-60 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
75 mΩ
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
125 W
Rise Time
11 ns
Turn-Off Delay Time
30 ns
Turn-On Delay Time
13 ns

Compliance Documents

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