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NXP Semiconductors MW6S004NT1

RF Power Transistor, 1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
280.00824 mg

Technical

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Current Rating
50 mA
Drain to Source Voltage (Vdss)
68 V
Frequency
1.96 GHz
Gain
18 dB
Gate to Source Voltage (Vgs)
12 V
Max Frequency
2 GHz
Max Operating Temperature
150 °C
Max Output Power
4 W
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
4 W
Packaging
Tape and Reel
Power Gain
19 dB
Test Current
50 mA
Test Voltage
28 V
Voltage Rating
68 V
Voltage Rating (DC)
28 V

Compliance Documents

Purchase

Unit Price
$13.634
Total Price
$13,634.00
Minimum: 1,000
Multiples: 1,000
Quantity must be in multiples of 1,000
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