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onsemi FDFS6N548

Integrated N-Channel PowerTrench┬« MOSFET and Schottky Diode 30V, 7A, 23m╬ę

Product Details

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
23 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
2 ns
Forward Current
2 mA
Forward Voltage
450 mV
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
700 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.8 V
Number of Elements
1
Power Dissipation
2 W
Rds On Max
23 mΩ
Resistance
23 MΩ
Rise Time
2 ns
Termination
SMD/SMT
Turn-Off Delay Time
14 ns
Turn-On Delay Time
6 ns

Compliance Documents