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onsemi MMBT5551

Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 350 mW Surface Mount SOT-23-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
930 µm
Length
2.92 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
160 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
100 MHz
hFE Min
80
Max Breakdown Voltage
160 V
Max Collector Current
600 mA
Max Frequency
150 °C
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
-55 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
350 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
160 V

Compliance Documents

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