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onsemi NTS4173PT1G

NTS4173P Series -30 V -1.2 A 290 mW SMT Power MOSFET - SC-70-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SOT-323
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-1.2 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
90 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
7.1 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
430 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
290 mW
Min Operating Temperature
-55 °C
Nominal Vgs
-1.15 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
290 mW
Rds On Max
150 mΩ
Rise Time
6.7 ns
Threshold Voltage
-1.15 V
Turn-Off Delay Time
19.9 ns
Turn-On Delay Time
5.3 ns

Compliance Documents

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