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Texas Instruments CSD17306Q5A

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm 8-VSONP -55 to 150

Product Details

Compliance

Lead Free
Contains Lead
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
4.9 mm
Thickness
1 mm
Width
6 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
3.3 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
6.4 ns
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
2.17 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.2 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.1 V
Number of Channels
1
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
3.2 W
Rds On Max
3.7 mΩ
Rise Time
13.1 ns
Threshold Voltage
1.1 V
Turn-Off Delay Time
18.4 ns
Turn-On Delay Time
7.8 ns

Compliance Documents