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Texas Instruments CSD18511Q5AT

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSONP -55 to 150

Product Details

Compliance

RoHS
Non-Compliant

Dimensions

Height
1.1 mm
Length
4.9 mm
Thickness
1 mm
Width
6 mm

Physical

Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.9 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
3.1 W
Turn-Off Delay Time
24 ns
Turn-On Delay Time
6 ns

Compliance Documents