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Home > Discrete Semiconductors > Transistors > Mosfets > Fairchild NDS355AN N-Channel MOSFET Transistor 30V 1.7A SMD SSOT-3

Fairchild NDS355AN N-Channel MOSFET Transistor 30V 1.7A SMD SSOT-3

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Quick Overview

NDS355AN Fairchild N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3

Fairchild NDS355AN N-Channel MOSFET Transistor 30V 1.7A SMD SSOT-3

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Details

FAIRCHILD SEMICONDUCTOR NDS355AN MOSFET Transistor, N Channel, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V SSOT-3

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and     other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

  • 1.7 A, 30 V. RDS(ON) = 0.125Ω @ VGS= 4.5 V
    RDS(ON) = 0.085 Ω @ VGS= 10 V
  • Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface mount package

Part Specification:

  • Type : Power MOSFET
  • Number of Elements : Single
  • Polarity : N
  • Channel Mode : Enhancement
  • Drain-Source On-Volt : 30V
  • Gate-Source Voltage (Max) : ±20V
  • Drain Current (Max) : 1.7A
  • Drain-Source On-Res : 0.085Ohm
  • Package Type : SuperSOT
  • Packaging : Tape and Reel
  • Power Dissipation : 0.5W
  • Output Power (Max) : Not Required
  • Frequency (Max) : Not Required
  • Noise Figure : Not Required
  • Power Gain : Not Required
  • Drain Efficiency : Not Required
  • Pin Count : 3
  • Mounting : Surface Mount
  • Operating Temp Range : -55C to 150C
  • Operating Temperature Classification : Military

Additional Information

NDS355AN
Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
Id - Continuous Drain Current: 1.7 A
Vds - Drain-Source Breakdown Voltage: 30 V
Rds On - Drain-Source Resistance: 85 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 mW
Mounting Style: SMD/SMT
Package / Case: SSOT-3
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Configuration: Single
Rise / Fall Time: 32 ns
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