Country Flags IBS Electronics USA IBS Electronics Mexico IBS Electronics Philippines IBS Electronics China IBS Electronics Malaysia IBS Electronics India IBS Electronics Hong Kong IBS Electronics Singapore
Home > Mosfets > FAIRCHILD FDN359AN MOSFET N-CH 30V 2.7A SSOT-3 ROHS

FAIRCHILD FDN359AN MOSFET N-CH 30V 2.7A SSOT-3 ROHS

Be the first to review this product

Availability: In stock

Only 150 left

$0.8000
OR

Quick Overview

FDN359AN Fairchild Semiconductor MOSFET SSOT-3 N-CH 30V

FAIRCHILD FDN359AN MOSFET N-CH 30V 2.7A SSOT-3 ROHS

Double click on above image to view full picture

Zoom Out
Zoom In

More Views

Details

FAIRCHILD SEMICONDUCTOR FDN359AN MOSFET Transistor, N Channel, 2.7 A, 30 V, 46 mohm, 10 V, 1.6 V
This N-Channel     Logic     Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Very fast switching
  • Low gate charge

Applications

Power Management


Specifications

Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: RoHS Compliant
Mounting Style: SMD/SMT
Package / Case: SSOT-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.7 A
Rds On - Drain-Source Resistance: 37 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Reel
Channel Mode: Enhancement
Brand: Fairchild Semiconductor
Configuration: Single
Fall Time: 13 ns
Forward Transconductance - Min: 9.5 S
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 500 mW
Rise Time: 13 ns
Series: FDN359
Factory Pack Quantity: 3000
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: FDN359AN_NL
Unit Weight: 0.001058 oz

Additional Information

FDN359AN
Click here to Download Datasheet I
© 1994 - 2019 IBS Electronics Inc. All rights Reserved.    •    Call Now: 1-800-717-6475     Go to Top  Go to Top of Page