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Home > Discrete Semiconductors > Transistors > Mosfets > International Rectifier RF630NSTRL N-Channel MOSFET 200V 9.3A SMD D-PAK-3

International Rectifier RF630NSTRL N-Channel MOSFET 200V 9.3A SMD D-PAK-3

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Quick Overview

IR IRF630NSTRL IC 200V 9. 3A, D/C 02+
N-CH 200V 9.3A D2PAK

Description: MOSFET Transistor Power Dissipation:82W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:9.5A; Package/Case:D2-PAK; Leaded Process Compatible:Yes; Continuous Drain Current - 100 Deg C:6.8A RoHS Compliant: Yes

International Rectifier RF630NSTRL N-Channel MOSFET 200V 9.3A SMD D-PAK-3

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International Rectifier RF630NSTRL N-Channel Enhancement Transistor MOSFET 200V 9.3A SMD D-PAK-3

Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The is a surface mount power package capable of accommodating die sizes HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application.

Additional Information

Manufacturer: International Rectifier
Product Category: MOSFET
Id - Continuous Drain Current: 9.3 A
Vds - Drain-Source Breakdown Voltage: 200 V
Rds On - Drain-Source Resistance: 300 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Qg - Gate Charge: 23.3 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 82 W
Mounting Style: SMD/SMT
Package / Case: D-PAK-3
Brand: International Rectifier
Channel Mode: Enhancement
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