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INTERSIL RFD14N05 MOSFET N-CH 50V 14A I-PAK

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Intersil - Intersil Rfd14N05 IC Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V

INTERSIL RFD14N05 MOSFET N-CH 50V 14A I-PAK

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INTERSIL RFD14N05 Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:14A; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Ty

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
SPECIFICATIONS
Part #: RFD14N05
Part Category: Transistors
Manufacturer: INTERSIL Corporation
Description: 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Status Discontinued
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 14 A
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1000 ohm
DS Breakdown Voltage-Min 50 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3

Additional Information

RFD14N05.
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