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Home > Discrete Semiconductors > Diodes & Rectifiers > Transistors > Mosfets > IR IRFD9014 Transistor MOSFET P-CH 60V 1.1A 3HEXPDIP

IR IRFD9014 Transistor MOSFET P-CH 60V 1.1A 3HEXPDIP

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IRFD9014 International Rectifier IR P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

IR IRFD9014 Transistor MOSFET P-CH 60V 1.1A 3HEXPDIP

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Details

IR IRFD9014 P-Channel Power MOSFET Transistor 1.1A 60V

Specifications

Product Category: MOSFET
RoHS: No
Technology: Si
Mounting Style: Through Hole
Package / Case: HVMDIP-4
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 60 V
Id - Continuous Drain Current: 1.1 A
Rds On - Drain-Source Resistance: 500 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single Dual Drain
Fall Time: 63 ns
Height: 3.37 mm
Length: 5 mm
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 1.3 W
Product: MOSFET Small Signal
Rise Time: 63 ns
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 11 ns
Width: 6.29 mm

INTERNATIONAL RECTIFIER IR Irfd9014 MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.1A; On Resistance, Rds(on):500mohm; Rds(on) Test Voltage, Vgs:-10V RoHS Compliant: No

Additional Information

IRFD9014
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